Insulating behavior in ultrathin bismuth selenide field effect transistors.
نویسندگان
چکیده
Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.
منابع مشابه
Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature
Recently, topological insulators (Bi2Se3, Bi2Te3 and Sb2Te3) have attracted much attention because of their bulk band gap (0.3 eV) and spin-polarized surface states with conductive massless Dirac Fermions [1]. Interestingly, Bi2Se3 has rhombohedral crystal structure which consists of Se or Bi lattices in stacked manner with the sequence of Se-Bi-Se-Bi-Se. This forms a sheet-like structure in wh...
متن کاملMagnetoresistance, Gating and Proximity Effects in Ultrathin NbN-Bi2Se3 Bilayers
Ultrathin Bi2Se3-NbN bilayers comprise a simple proximity system of a topological insulator and an s-wave superconductor for studying gating effects on topological superconductors. Here we report on 3 nm thick NbN layers of weakly connected superconducting islands, overlayed with 10 nm thick Bi2Se3 film which facilitates enhanced proximity coupling between them. Resistance versus temperature of...
متن کاملHigh carrier mobility in single ultrathin colloidal lead selenide nanowire field effect transistors.
Ultrathin colloidal lead selenide (PbSe) nanowires with continuous charge transport channels and tunable bandgap provide potential building blocks for solar cells and photodetectors. Here, we demonstrate a room-temperature hole mobility as high as 490 cm(2)/(V s) in field effect transistors incorporating single colloidal PbSe nanowires with diameters of 6-15 nm, coated with ammonium thiocyanate...
متن کاملGrowth of Antimony Telluride and Bismuth Selenide Topological Insulator Nanowires
Topological insulators are a relatively new class of materials, which are insulating in the bulk and conductive on the surface. Surface conductance measurements of topological insulators are often obscured by impurities in the bulk. Nanowires made of a topologically insulating material provide a solution to this problem with their large surface-area-to-volume ratio. I examine the growth procedu...
متن کاملCrystal growth and anomalous transport properties of CuxBi2Se3
Topological insulators (TIs) have received considerable attention due to their potential to offer new platforms for the realization of novel states of quantum maters. TIs are characterized by their fully insulating gap in the bulk but necessarily gapless edge or surface states protected by time-reversal symmetry. Recently, the three-dimensional (3D) TIs were theoretically predicted and discover...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nano letters
دوره 11 5 شماره
صفحات -
تاریخ انتشار 2011